Temperature dependence of LiNbO3 dislocation density in the near-surface layer

نویسندگان

چکیده

Density of dislocations in the near-surface layer was investigated X-cut LiNbO3 depending on thermal annealing temperature range 400°C–600°C. A dynamic model randomly distributed has been developed for by using X-ray diffraction. The experimental results showed that dislocation density reached minimum at 500°C, with analysis being performed when wet selective etching and diffraction methods were used. We concluded homogenization is an effective technique to improve quality photonic circuits based LiNbO3. obtained are important optical waveguides, LiNbO3-on-insulator-based micro-photonic devices, electro-optical modulators, sensors, etc.

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ژورنال

عنوان ژورنال: Chinese Optics Letters

سال: 2022

ISSN: ['1671-7694']

DOI: https://doi.org/10.3788/col202220.061601